PART |
Description |
Maker |
FRM244D FN3230 FRM244R FRM244H |
12A/ 250V/ 0.400 Ohm/ Rad Hard/ N-Channel Power MOSFETs 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system
|
INTERSIL[Intersil Corporation]
|
RFD3055SM RFP3055 RFD3055 |
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs 12A/ 60V/ 0.150 Ohm/ N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
RFM12N40 RFM12N35 |
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs 12A/ 350V and 400V/ 0.500 Ohm/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
APT10090BLL APT10090SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 12A 0.900 Ohm
|
Advanced Power Technology Ltd.
|
APT1201R2SLL APT1201R2BLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 1200V 12A 1.200 Ohm
|
Advanced Power Technology Ltd.
|
STS12NF30L STS12NF30L0705 |
N-channel 30V - 0.008Ω - 12A SO-8 STripFET II Power MOSFET N-channel 30V - 0.008ヘ - 12A SO-8 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
IRF101 IRF140-143 IRF142 IRF143 IRF541 IRF543 IRF5 |
N-Channel Power MOSFETs/ 27 A/ 60-100V N-Channel Power MOSFETs, 27 A, 60-100V 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor] Samsung semiconductor Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
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MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|